Dynamic gearshift during oscillator build-up based on duty cycle

ABSTRACT

A dynamic gearshifting system includes a monitoring device configured to monitor a duty cycle of a clock output signal of a crystal oscillator circuit during oscillation buildup upon power-up of the crystal oscillator circuit. The dynamic gearshifting system also includes a detecting device configured to detect whether the duty cycle of the clock output signal of the crystal oscillator circuit meets a duty cycle threshold value. The dynamic gearshifting system may further include an assertion device configured to assert a control signal based on detecting the duty cycle meets the duty cycle threshold value. The asserted control signal configured to dynamically adjust a transconductance of the crystal oscillator circuit.

BACKGROUND

1. Field

Aspects of the present disclosure relate to crystal oscillators, andmore particularly to method and system for dynamic gearshift duringoscillation buildup by monitoring a duty cycle of an output of thecrystal oscillator.

2. Background

Due to the inherent characteristics of certain crystals, they can bemade to oscillate at a very precise frequency. Thus, crystal controlledoscillators are often used in applications where a precise frequency isrequired.

The crystal and its associated active circuitry together constitute acrystal oscillator. They form, in effect, a lossless inductor (L)capacitor (C) LC tank circuit that oscillates at a resonant frequencydictated by the values of the inductor and the capacitor.

Crystal oscillator circuits operate by virtue of positive feedback at orthe near the resonant frequency of the crystal. The positive feedback isprovided by an active circuit that poses, in effect, a negativeimpedance to the crystal. When power is initially applied to a crystaloscillator circuit, a large negative impedance effected by the activecircuit overcomes the loss associated with the resistance (loss) of thecrystal. As the amplitude builds up toward the final steady state at afrequency very close to the resonant frequency of the LC tank, thenegative impedance created by the active circuit begins to diminishuntil it just matches the resistance of the crystal. Ultimately, itsettles at precisely the resonant frequency of the LC tank. In otherwords, the loss encountered in the crystal is compensated for by theactive circuit so that the oscillation can be sustained.

In some applications, the amount of time required to power up andstabilize an oscillator may be longer than desirable. Accordingly, forthese applications it is desirable to reduce the time required to powerup and stabilize the oscillator.

SUMMARY

According to one aspect of the present disclosure, an apparatus includesa monitoring device configured to monitor a duty cycle of a clock outputsignal of a crystal oscillator circuit during oscillation buildup uponpower-up of the crystal oscillator circuit. The apparatus also includesa detecting device configured to detect whether the duty cycle of theclock output signal of the crystal oscillator circuit meets a duty cyclethreshold value. Further, the apparatus includes an assertion deviceconfigured to assert a control signal based on detecting if the dutycycle meets the duty cycle threshold value. The asserted control signalis configured to dynamically adjust a transconductance of one or moretransistors in the crystal oscillator circuit.

According to one aspect of the present disclosure, a method includesmonitoring a duty cycle of a clock output signal of a crystal oscillatorcircuit during oscillation buildup upon power-up of the crystaloscillator circuit. The method also includes detecting whether the dutycycle of the clock output signal of the crystal oscillator circuit meetsa duty cycle threshold value. Further, the method includes asserting acontrol signal based on detecting if the duty cycle meets the duty cyclethreshold value. The asserted control signal is configured todynamically adjust a transconductance of one or more transistors in thecrystal oscillator circuit.

According to one aspect of the present disclosure, an apparatus includesmeans for monitoring a duty cycle of a clock output signal of a crystaloscillator circuit during oscillation buildup upon power-up of thecrystal oscillator circuit. The apparatus also includes means fordetecting whether the duty cycle of the clock output signal of thecrystal oscillator circuit meets a duty cycle threshold value. Further,the apparatus includes means for asserting a control signal based ondetecting if the duty cycle meets the duty cycle threshold value. Theasserted control signal is configured to dynamically adjust atransconductance of one or more transistors in the crystal oscillatorcircuit.

This has outlined, rather broadly, the features and technical advantagesof the present disclosure in order that the detailed description thatfollows may be better understood. Additional features and advantages ofthe disclosure will be described below. It should be appreciated bythose skilled in the art that this disclosure may be readily utilized asa basis for modifying or designing other structures for carrying out thesame purposes of the present disclosure. It should also be realized bythose skilled in the art that such equivalent constructions do notdepart from the teachings of the disclosure as set forth in the appendedclaims. The novel features, which are believed to be characteristic ofthe disclosure, both as to its organization and method of operation,together with further objects and advantages, will be better understoodfrom the following description when considered in connection with theaccompanying figures. It is to be expressly understood, however, thateach of the figures is provided for the purpose of illustration anddescription only and is not intended as a definition of the limits ofthe present disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present disclosure, referenceis now made to the following description taken in conjunction with theaccompanying drawings.

FIG. 1 illustrates an exemplary crystal oscillator circuit according toone or more aspects of the present disclosure.

FIG. 1 a illustrates exemplary waveform of an output signal including anundesirable runt pulse.

FIG. 2 illustrates exemplary waveforms of output signals at variousterminals on the crystal oscillator circuit of FIG. 1 according to oneor more aspects of the present disclosure.

FIG. 3 illustrates an exemplary core of a crystal oscillator accordingto one or more aspects of the present disclosure.

FIG. 4 illustrates exemplary waveforms of out signals at variousterminals on the crystal oscillator core of FIG. 3 according to one ormore aspects of the present disclosure.

FIG. 5 illustrates another exemplary crystal oscillator circuit 500according to one or more aspects of the present disclosure.

FIG. 6 illustrates an exemplary rdy generation circuit according to oneor more aspects of the present disclosure.

FIG. 7 is exemplary crystal oscillator circuit for clock generationaccording to one or more aspects of the present disclosure.

FIG. 8 illustrates an exemplary waveform outputted at various terminalson the crystal oscillator circuit of FIG. 7 according to one or moreaspects of the present disclosure.

FIG. 9 illustrates a method for gearshifting during oscillation buildupof a crystal in a crystal oscillator in accordance with one or moreaspects of the disclosure.

DETAILED DESCRIPTION

The detailed description set forth below, in connection with theappended drawings, is intended as a description of variousconfigurations and is not intended to represent the only configurationsin which the concepts described herein may be practiced. The detaileddescription includes specific details for the purpose of providing athorough understanding of the various concepts. However, it will beapparent to those skilled in the art that these concepts may bepracticed without these specific details. In some instances, well-knownstructures and components are shown in block diagram form in order toavoid obscuring such concepts. As described herein, the use of the term“and/or” is intended to represent an “inclusive OR”, and the use of theterm “or” is intended to represent an “exclusive OR”.

Overview

The present disclosure describes a method and system for automatic ordynamic gearshifting during oscillation buildup of a crystal oscillatorby monitoring a duty cycle of a buffer output of a crystal oscillatorcircuit. Gearshifting during oscillation buildup in accordance with anaspect of the present disclosure reduces time required for the output ofthe crystal oscillator to settle to a final steady state as well ascurrent consumed by the crystal oscillator.

Crystal Oscillator

FIG. 1 illustrates an exemplary crystal oscillator circuit 100 accordingto one or more aspects of the present disclosure.

In one aspect, the crystal oscillator circuit may be a 40 megahertz(MHz) crystal oscillator that is implemented in a radio accesstechnology processor/controller, such as a wireless local area network(WLAN) chip. Although the crystal oscillator in the present disclosureis implemented in a WLAN chip, the crystal oscillator may be implementedin other radio access technologies such as Long Term Evolution,Worldwide Interoperability for Microwave Access, etc. For example, thereading material may include magazines, articles, electronicpublications etc. The crystal oscillator circuit 100 may include acrystal oscillator (XO) core 110, a buffer 120 that converts asinusoidal output from the XO core 110 to a square wave, a controlsignal generator, such as a RDY Generator 130, a set of logic devicesand an output driver. The RDY generator 130 is a ready to operate anduse generator. The set of capacitors, c1 144 and c2 150, may be withinor external to the XO core 110. The crystal oscillator also includes alow drop out (LDO) regulator 102 to drive the XO core 110 and the buffer120. The LDO regulator 102 receives an external supply voltage, Vcc,through a terminal 142.

In one aspect, an output voltage of the LDO regulator 102 is about 1.2volts (v). The LDO 102 provides immunity to the external voltage supply,Vcc 146, which allows Vcc 146 to be unregulated or noisy. An outputsignal, xo_out 148 from the XO core 110 is ac-coupled to the buffer 120via a capacitor (c3) 118. In one aspect of the disclosure, the externalsupply voltage, Vcc 146, ranges from 1.6v to 3.6v. A digital corevoltage, Vdd 152, generated within the radio access technology chip isprovided to the crystal oscillator circuit 100 at terminal 138, forexample. The digital core voltage, Vdd 152, powers the output driver106, among others, in the crystal oscillator circuit 100.

In some aspects of the present disclosure, the proposed method andsystem for automatic gearshift during the crystal oscillator buildup maybe implemented at least in part within the buffer 120 and the RDYGenerator 130. In this aspect, an output signal, rdy signal 154, isgenerated by the RDY generator 130 when a duty cycle of an outputsignal, buf_out signal 156, from the buffer 120 meets a threshold valueor is above the threshold value (e.g., >40%). Because the amount of timeto power up and stabilize the crystal oscillator circuit 100 is ofconcern to some applications, aspects of the present disclosure seek toreduce the amount of time required to initiate the stable operation ofthe crystal oscillator circuit 100. In one aspect, the initiation of thestable operation of the crystal oscillator circuit 100 is based on anassertion of the rdy signal 154 generated by the RDY generator 130.

The duty cycle of the buf_out signal 156 may be monitored by the RDYgenerator 130. The RDY generator 130 may be configured to generate therdy signal 154, to control features of the XO core 110. Further, controlof the XO core 110 may be based on control signals received at the XOcore 110 from a control device 140. For example, the control device 140may be configured to generate a control signal, gm_ctrl 158, todynamically adjust a transconductance of one or more transistors in theXO core 110. In one aspect of the present disclosure, the controlsignal, gm_ctrl 158, may be based on the rdy signal 154 and/or at leastone of a combination of control signals received by the control device140. The combination of control signals may include control signals suchas a transconductance, Gm, (e.g., Gm (1,0), a gear shift signal, Gshiftand a direct current operating point (dcop). The combination of controlsignals may be configured to allow gearshift from a high Gm to a lowerGm of the XO core during oscillation buildup to reduce the time for theoscillation to settle to its final steady state. In some aspects, thetime for the oscillation to settle to its final steady state is reducedby multiple clock cycles, e.g., one thousand clock cycles.

In one aspect of the disclosure, the buf_out signal 156 is initiallyconditioned to be low (or high), i.e., the duty cycle is at zero (or 1)upon power-up of the crystal oscillator circuit 100. As oscillation ofthe crystal 116 builds up in the crystal oscillator circuit 100, theduty cycle of the XO core output signal, xo_out 148, and subsequentlythe buf_out signal 156 begins to increase (or decrease). The change inthe duty cycle or other features of the buf_out signal 156 iscontinually monitored by the RDY Generator 130. When the duty cycle ofthe buf_out signal 156 meets or is above the threshold duty cycle value,the RDY Generator 130 asserts a signal, such the rdy signal 154.

Based on the assertion, a control signal that may be the rdy signal 154or based on the rdy signal 154, is forwarded to an input of a delayblock 108 and/or to an input of the control device 140. When a gearshiftoccurs, there will be some disturbance inevitably created in the XO core110. The delay introduced herein 108 is meant to shield the disturbancefrom the rest of the circuit. The rdy signal 154 or a signal based onthe rdy signal 154 is delayed at the delay block 108. The output of thedelay block, i.e., the delayed rdy, RDY signal 160, is used as a clockfor a clock switching operation in a logic device 112, such as amultiplexer, of the set of logic devices in the crystal oscillatorcircuit 100. In one aspect, the switching operation may be based on anoutput signal, i.e., switch2clk signal 162, from a D flip flop (DFF) 114in the crystal oscillator circuit 100. The switch2clk signal 162 isbased on the delayed rdy, RDY signal 160, which is forwarded to an inputof the DFF 114. The delayed rdy signal, RDY 160, may be measured at aterminal 122 of the crystal oscillator circuit 100. The delayed rdysignal, RDY 160, is used to generate the clock output signal, clk_outsignal 164, such that the clk_out signal 164 is free of glitches, as thestable operation of the crystal oscillator circuit is initiated beforethe oscillator settles to its final state. This feature reduces theamount of time required to initiate the stable operation of the crystaloscillator.

The DFF 114 may be powered by the digital core voltage, Vdd. The outputof the DFF 114, i.e., the switch2clk signal 162, may also be based onthe buf_out signal 156 received by the DFF 114. The switch2clk signal162 is forwarded to an input of the logic device 112, and may serve as acontrol signal for the multiplexer 112. For example, the multiplexer isswitched to position “1” when the switch2clk signal 162 is asserted (orhigh) and is at position “0” when the switch2clk signal 162 isde-asserted (or low). The combined effect of RDY Generator 130, DFF 114,delay block 108 and multiplexer 112 is that the clock seen at XO_RF(132) is free of glitches. The output clock at 132 is initially held atzero and transitions to a clean clock as switch2clk is asserted. If thistransition is not properly handled, (i.e., if the switching ofmultiplexer (mux) is poorly handled) an undesirable runt pulse (glitch)may be included in the output clock 132. The runt pulse, shown in FIG. 1a may cause logic to fail when used in a logic circuit

The clk_out signal 164, is forwarded to the output driver 106, which ispowered by the digital core voltage Vdd received at terminal 138 of thecrystal oscillator circuit 100. The output driver 106 may be enabled ordisabled by asserting or de-asserting a radio frequency (e.g., highfrequency radio frequency) enable signal, En_RF. The output driver 106is configured to output a radio frequency crystal oscillator signal,XO_RF signal, based on the clock output signal, clk_out signal 164. TheXO_RF signal may be measured at output terminal 132 of the crystaloscillator circuit.

Output Signal Waveforms

FIG. 2 illustrates exemplary waveforms of output signals at variouspoints on the crystal oscillator circuit of FIG. 1 according to one ormore aspects of the present disclosure.

The waveforms correspond to the output signal of the XO core 110 (i.e.,xo_out signal), the buf_out signal 156, the delayed rdy signal, RDY 160,the switch2clk signal 162 and the XO_RF 132 signal. The horizontal axisof the each waveform corresponds to a time and the vertical axiscorresponds to a voltage.

When the crystal oscillator circuit 100 is powered on, the noiseinherent in the circuit and/or created by the applied voltage initiatesoscillation of the oscillator 100. A capacitance introduced by c1 and c2resonates with the crystal 116, which acts inductively at a resonantfrequency of 40 MHz, for example. Correspondingly, the voltage swingacross the terminals 124 and 126 of the crystal 116 increases with time.This is illustrated in the xo_out waveform of FIG. 2.

The rdy signal 154 is based on the output signal, buf_out signal 156, atthe buffer 120. The rdy signal 154 is asserted when the duty cycle ofthe buf_out signal 156 is greater than the duty cycle threshold value.The rdy signal 154 is applied (e.g., immediately) to the control device(ctrl) 140 and causes the XO core to gearshift. A transient that may becaused by the gearshift in the XO core 110 is allowed to settle whilethe rdy signal 154 is being delayed by the delay block 108 in the amountof t_(d) seconds. The delay should be long enough to span the transient,as illustrated in FIG. 2.

When the stable operation of the crystal oscillator circuit 100 isindicated at time, t_(d) seconds after rdy, a clock switching operationis initiated by generating the switch2clk signal 162 at time t_(s) ofthe switch2clk waveform corresponding to a next falling edge, f_(e), ofthe buf_out waveform. This feature is illustrated by the line 134 ofFIG. 2. As noted, the switch2clk signal 162 may be configured to controlthe logic device/multiplexer 112, which allows the multiplexer to outputa clock output signal, clk_out, upon which the XO_RF signal is based. Inone aspect of the disclosure, the XO_RF signals is initiated at time,t_(xo), illustrated in the XO_RF waveform at a rising edge, r_(e), ofthe buf_out waveform, which follows the falling edge, f_(e), of thebuf_out waveform. This feature is illustrated by the line 136 of FIG. 2.

Crystal Oscillator Core

FIG. 3 illustrates an exemplary crystal oscillator core 300 of a crystaloscillator according to one or more aspects of the present disclosure.

For explanatory purposes, the crystal oscillator core, XO core 300, isshown in a simplified form. The XO core 300 may be similar to the XOcore 110 of FIG. 1. The XO core 300 includes a crystal 316, a resistor,R1 302, a variable resistor, R2 304, and a pair of back to back currentsources connected together. The current sources may include transistorsM0, M1, M2 and M3. The transistor M0 provides a transconductance, gm,for oscillation. The transistors, M0 and M1, are biased in sub-thresholdregion for optimum transconductance, gm, with low drain current, Id. Adependence of the drain current, Id, on a gate to source voltage, Vgs,of the transistor M0, in sub-threshold region is exponential. In oneaspect of the disclosure, the drain current of M1 of the XO core 300 atthe onset of oscillation is given by,

I=n*Vt/R, where

-   -   Vt is the thermal voltage given by kT/q, where k is the Botzmann        Constant, T, the absolute temperature, and q, the electronic        charge,    -   R2 304 is a degeneration resistor at the source of M1, and    -   n is an effective current density ratio of M0 and M1.

The sizes of transistors M1 and M2 as well as the variable resistor R2304, may be programmable in two or more steps each to allow fordifferent settings of the transconductance, gm (e.g., 4 differentsettings). In some aspects, the settings may be more or less than 2. Thevariable resistance and the sizes of transistors M1 and M2 may becontrolled by the control signal from the RDY generator 130 and/or thecontrol signal from the control device 140 of FIG. 1. The control deviceoutput signal may be based on rdy signal 154, as well as the combinationof control signals that are received by the control device 140. Thecontrol signal referred to as gm_ctrl, may be configured to vary oradjust the resistance of the variable resistor R2 304. Varying theresistance of the variable resistor R2 304 and/or the sizes oftransistors M1 and M2 varies or adjusts the drain current, I1 at thetransistor M1 and the corresponding drain current at the transistor M0.Subsequently, the transconductance, gm, of the transistor M0 is variedor adjusted as a result of the changes to the drain current of thetransistors, M1. One advantage of this aspect is that as oscillationbuilds up, the current consumed by the XO core 300 is automaticallyreduced until the negative resistance seen by the crystal 316 matchesits electrostatic resistance (ESR). The reduction in current consumption(representing the reduction in transconductance, gm, of transistor M0)as oscillation builds up continues until the negative resistance seenacross the gate and drain of the transistor M0 is the same as ESR of thecrystal 316. In some aspects, the transconductance gm is reduced to anadequate level to overcome the ESR of the crystal 316.

Crystal Oscillator Core Output Waveform

FIG. 4 illustrates exemplary waveforms of output signals at variousterminals on the XO core 300 of FIG. 3 according to one or more aspectsof the present disclosure.

The horizontal axis of the each waveform corresponds to a time and thevertical axis corresponds to a voltage or a current. The waveformsinclude a gate to source voltage, Vgs, of the transistor M0 and a draincurrent, Id, of the transistor M0. When the XO core 300 is powered up,the oscillation builds up from an initial state to a stable state.Initially, M1 conducts a dc current, I1=n*Vt/R, while M0 conducts n*I1.As the oscillation builds up, the gate to source voltage, Vgs, of thetransistor M0 induces a growing sinusoidal alternating current riding ona dc current of Id that is initially equal to n*I1. As the oscillationbuilds up further, the drain current, Id, of the transistor M0 becomesprogressively non-linear, and its average direct current becomessmaller. Consequently, the average (direct current) gate to sourcevoltage, Vgs, of the transistor M0 begins to decrease and thus lowersthe transconductance, gm, of transistor M0 until the negative resistanceintroduced by the transistor M0 across its gate and drain matches theESR of the crystal 316. Because a higher transconductance, gm,corresponds to a faster buildup of the oscillation, it is advantageousto provide a means by which the initial transconductance, gm, is higheror increased (i.e., gearshifted to its highest value, for example) andas the oscillation builds up, the transconductance, gm, is dynamicallylowered. Increasing the initial transconductance, gm, and dynamicallylowering the transconductance, gm, as the oscillation build up may befacilitated by control signals, such as, gm_ctrl(1:0) that acts on therdy signal described herein. As noted, the control signals may beconfigured to control the variable resistor R2 and/or the sizes oftransistors M1 and M2 to implement the feature of increasing the initialtransconductance, gm, and dynamically lowering the transconductance, gm,as the oscillation builds up. Increasing the initial transconductance,gm, and dynamically lowering the transconductance, gm, further reducesthe amount of time required to initiate the stable operation of thecrystal oscillator circuit 100.

Startup Crystal Oscillator Circuit

FIG. 5 illustrates a more complete exemplary crystal oscillator circuit500 according to one or more aspects of the present disclosure. Thecrystal oscillator circuit 500 includes a startup circuitry 516, a XOcore 510 and a buffer 520. The XO core 510 may be similar to the XO core300 of FIG. 3. The startup circuitry 516 may include logic circuitscomprising a set of transistors and one or more resistors, Rpmos. One ormore of the transistors in the startup circuitry 516 may be enabled bysignals En and En_n. The startup circuitry 516 may be configured tostartup or turn on transistors of the XO core 510 to initiate theoscillation of the crystal 316. As noted, the output of the XO core 510is initially zero upon power-up of the crystal oscillator circuit 500.

The XO core 510 includes a pair of back to back current sourcesconnected together, a variable resistor R2 304, a resistor R1 302 acrossthe drain and gate of the transistor M0 as well as across terminals ofthe crystal 316. Similar to the XO core 300, the current sources of theXO core 510 may include transistors M0, M1, M2 and M3. The transistor M0provides a transconductance, gm, for oscillation. An output of the XOcore 510 may be defined as the voltage at the drain of the transistorM0. The output of the XO core 510 is ac-coupled to an analog to clockconversion circuit within the buffer 520. The analog to clock conversionmay be implemented in a number of different ways. For example, the inputof the XO core 510 is ac-coupled to an inverter (made up of transistorsNM1 and PM1) biased by a pair of diodes connected/coupled to NMOStransistor (NM2) and PMOS transistor (PM2) through a large resistor R3in the buffer 520. The pair of diodes connected together create avoltage when fed from a current source that also becomes the supplyvoltage for the inverter (PM1, NM1). The voltage is approximately equalto the sum of P and N MOS thresholds (Vr˜1V). The output of the invertermay be level-shifted to the XO core voltage (˜1.2V) via a low to highvoltage circuit.

As noted, the resistance of the variable resistor R2 304 as well astransistors M1 and M2 can be adjusted based on control signals from theRDY generator 130 and/or from the control device 140. In one aspect, thevariable resistor R2 304 as well as the transistor M1 or M2 may beprogrammable to vary the transconductance, gm, of the transistor M0. Thetransistor M1 or M2 as well as the variable resistor R2 may beprogrammable in multiple steps each to allow for different settings ofthe transconductance, gm. Although FIG. 5 illustrates four differentsettings of the transconductance, gm, (e.g., gm (00), gm (01), gm (10),gm (11)), the settings may be more than four or less than four so longas the settings are configured to adjust the transconductance, gm, toreduce the time for the oscillation to settle to its final steady state.

As noted the buffer 520 includes the analog to clock conversion circuitthat includes P and N MOS devices, such as NMOS transistors (NM1 andNM2) and PMOS transistors (PM1 and PM2), a resistor R3 and capacitors(C1 and C2). The buffer 520 may also include a level shifter, e.g., L2H,as well as inverters I1 and I2. Because the control signals may besubject to level shifting to correspond to the configuration of outputdrivers (e.g., 104 and 106) an output (e.g., clkout) of the crystaloscillator circuit 500 is converted back to the core voltage (e.g., Vdd)levels by the level shifter L2H. The ratios of P and N MOS devices arepurposely skewed to yield a desired output of the crystal oscillatorcircuit 500 at startup, such as a high in this example, clkout (i.e.,clkout equal to “1” or complimentary signal, pre, equal to “0”) atstartup. For example, the NMOS devices are in the ratio of 1:4 (i.e.,NM2:NM1) while the PMOS devices are in a ratio of 1:5 (PM2:PM1).Accordingly, transistor PM1 is stronger than NM1 can accept. Thus Pre_nand clkout go high, while pre goes low.

In one or more aspects of the disclosure, complementary signals, pre andpre_n are forwarded to the RDY generator, which is configured togenerate a control signal, e.g., rdy signal 154, for the XO core 510.The rdy signal 154 may also correspond to a steady state reliabilitysignal to indicate that the output, clkout, of the crystal oscillatorcircuit 500 is steady and reliable. The rdy signal 154 may be based onthe output from the buffer 520, and/or the complimentary signals pre andpre_n (discussed with reference to FIGS. 5 and 6). The complimentarysignal, pre, is initially “0,” which causes the capacitor C3 (discussedwith reference to FIGS. 5 and 6) to be discharged to ground. Asoscillation builds up, the duty cycle seen at “pre” begins to increasefrom zero initially, and when it reaches a desirable or pre-determinedvalue, a comparator (such as comparator CMP of FIG. 6) triggers andassert “rdy”=1 (i.e., assert the rdy signal 154) indicating a stableoperation of the crystal oscillator circuit 500. The comparator may bewithin an RDY generator, such as the RDY generator 130 of FIG. 1. Asnoted the features of the disclosure allows for indication of a stableoperation even before the oscillator settles into a final frequency andamplitude. In one or more aspects of the disclosure, the rdy signal 154,is asserted when the output of the crystal oscillator circuit builds upto a duty cycle that is greater than a predefined threshold value, e.g.,duty cycle>40%. Once asserted, the rdy signal 154 remains asserted untilthe duty cycle falls below 30% or some other predefined threshold value.

RDY Generation

FIG. 6 illustrates an exemplary RDY generation circuit 600 according toone or more aspects of the present disclosure.

The RDY generation circuit 600 may be implemented in the RDY generator130 of FIG. 1. In one aspect of the disclosure, the RDY generationcircuit 600 includes a comparator 602 as well as P and N MOS devices,such as NMOS transistors (NM3-NM7) and PMOS transistors (PM3 and PM9),and a capacitor, C3. The NMOS and PMOS devices are configured accordingto a set of ratios to allow the RDY generation circuit 600 to generatecontrol signals that indicate a stable operation even before the crystal316 settles into a final frequency and amplitude. The ratios oftransistor sizes, NM4, NM5, NM6 and PM5, PM6 dictate the duty cyclethresholds for asserting and de-asserting the rdy signal. The current,Iin, entering the RDY generation circuit 600 may be defined as 9*I0(e.g., 9 micro amperes) as an example in an aspect of the presentdisclosure.

In one aspect of the disclosure, the current flowing through thetransistors PM5 and PM6 are 9*I0. When the signal, pre, is lowcorresponding to the duty cycle of zero, as is the case at an onset ofthe oscillation, the current through PM5 flows entirely into PM 8 andthus the capacitor, C3, is discharged by the drain current of NM4 tozero (ground). This causes Rdy to be low (or de-asserted) and thetransistor NM7 to be turned off. All of the current (9*I0) from thetransistor PM6 flows in to the transistor NM5. The drain of transistorNM4 is at zero when the capacitor C3 is fully discharged to zero.Alternately, if pre is high, which corresponds to a duty cycle of “1”,all of the current through the transistor PM5 flows through thetransistor PM9 and charges C3 gradual toward a voltage of Vdd. As thevoltage across C3 increases, the transistor NM4, begins to conductcurrent and increases to a current of 4*I0. Thus, there is a net currentof 5*I0 (i.e., (9−4)*I0) that is used to charge C3. An equilibrium isattained when the voltage across C3 is high enough to reduce the currentat the transistor PM5 to 4*I0. With the duty cycle, a, defined as thepercentage of one clock period while “pre” is high and “pre_n” is low,that is between zero and one, the charge deposited to the capacitor, C3,in one period is α*9*I0, while the charge removed is 4*I0. When the netcharge deposited exceeds the charge removed, the voltage across thecapacitor, C3, begins to build up or accumulate. Accordingly, thevoltage across the capacitor, C3, begins to increase when the chargedeposited to the capacitor is greater than the charge removed ordischarged from the capacitor, C3 (i.e., when α*9*I0>4*I0). In thiscase, solving for α results in α>4/9=0.44 or 44% duty cycle. As aresult, an indicator corresponding to the rdy signal 154 or the rdysignal 154 is asserted when the duty cycle of the output (e.g., clkout)signal from the buffer 520 exceeds 44%. When the rdy signal 154 isasserted, NM7 is turned on, thereby reducing the discharge current to{4/(9+2)}*9*I0=3.3*I0. Accordingly, the rdy signal 154 may bede-asserted when α*9*I0<3.3*I0, or when α<0.37 (37%). In one or moreaspects of the disclosure, XO_RF is forced to a low when the rdy signal154 is inactive or de-asserted. The XO_RF signal may transition to acontinuous clock in a glitchless manner when the rdy signal 154 isactive or asserted.

Crystal Oscillator Circuit

FIG. 7 is exemplary crystal oscillator circuit 700 illustrating clockgeneration implementation according to one or more aspects of thepresent disclosure.

The crystal oscillator circuit 700 incorporates features of the crystaloscillator circuit 100 of FIG. 1 and features of the XO core 300, and istherefore labeled accordingly for illustrative purposes. For example,similar to FIG. 3, the crystal oscillator circuit 700 includes XO core300. Further, similar to FIG. 1, the crystal oscillator circuit 700includes a Rdy generator 130, a delay block 108, a DFF 114, multiplexer112, buffer 120 and output drivers 106.

According to one or more aspects of the present disclosure, initially,the rdy signal 154 and RDY signal 160 are reset to zero upon power-up ofthe crystal oscillator circuit 700. As a result, the DFF 114 is reset,which causes the switch2clk signal 162 at the output of the DFF 114 tobe set to “0.” Because the switch2clk signal 162 controls themultiplexer 112, the output of the multiplexer, clk_out signal 164, isalso at “0” when the switch2clk signal 162 is “0.” When the rdy signal154 becomes active or high, i.e., when the RDY generator 130 determinesthat the duty cycle of the crystal oscillator (e.g., buf_out signal 156)is greater than a predetermined threshold, a control signal, e.g.,gm_ctrl, based on the rdy signal 154 is forwarded to the XO core 300, toadjust the transconductance, gm of the XO core 300. The output of the XOcore 300 is ac-coupled, via a capacitor C3 118, to an analog to clockconversion circuit within the buffer 120. The output of the buffer 120is forwarded to the RDY generator 130, which monitors the duty cycle ofthe buffer output signal, buf_out. The buf_out signal 156 is based onthe output of the XO core 300. When the duty cycle of the buffer outputsignal, buf_out, meets or is greater than a predefined threshold, therdy signal 154 becomes active or asserted and a control signal based onthe rdy signal 154 is looped back into the XO core 300. As alreadydescribed, the control signal may be configured to vary the resistanceof the variable resistor R2 304 or the sizes of the transistors M1 andM2 with a net effect a change in the transconductance, gm, of the XOcore 300. Because the change in the transconductance, gm, generates adisturbance to XO core, which may result in glitches, the rdy signal 154is delayed by the delay block 108 to become “RDY”, 160, before beingforwarded to a “force reset bar Rn” input of DFF 114. After Rn isreleased (e.g., increased to a high by the delayed rdy signal 160) DFFis free to respond to the “D” input on a next falling edge of buf_out.Thus, the Q output of DFF transitions to a high, which corresponds tothe switch2clk signal 162. The switch2clk signal 162 is used to switchthe mux position from “0” to “1.”

Crystal Oscillator Output Waveforms

Similar to the exemplary waveforms of FIG. 2, FIG. 8 illustratesexemplary waveforms defined at various terminals of the crystaloscillator circuit of FIG. 1.

In the exemplary waveforms of FIG. 8, however, the XO_RF signal isreplaced with the clk_out signal 164, to illustrate the relationship ofthe clk_out signal 164 with the other signals in the exemplarywaveforms. Similar to the XO_RF signal, the clk_out signal 164 isinitiated at time, t_(XO), illustrated in FIG. 8, at a rising edge,r_(e), of the buf_out waveform, which follows the falling edge, f_(e),of the buf_out waveform. As illustrated by the waveforms of FIG. 8, theswitch2clk signal 162 becomes “1” on the falling edge of buf_out signal156. On the next rising edge of buf_out signal 156, the clk_out signal164 transitions to “1”. From thereon, XO_RF is active. Prior to the rdysignal 154 being active, the XO_RF signals are held at a low.

Gearshift Process Flow

FIG. 9 illustrates a method for automatic gearshifting duringoscillation buildup of a crystal in a crystal oscillator in accordancewith one or more aspects of the disclosure.

As shown in FIG. 9, a device in the radio access technology chip, thatmay be the RDY generator 130 or the RDY generation circuit 600, maymonitor a duty cycle of a clock output signal of a crystal oscillatorcircuit during oscillation buildup upon power-up of the crystaloscillator circuit, as shown in block 902. In one aspect, the clockoutput signal may be the buf_out signal 156 at an output of the buffer120/520. In block 904, the RDY generator 130 or the RDY generationcircuit 600 detect whether the duty cycle of the clock output signal ofthe crystal oscillator circuit meets a duty cycle threshold value. Inblock 906, the RDY generator 130 or the RDY generation circuit 600 mayassert a control signal when the duty cycle exceeds a threshold value.The asserted control signal may be configured to dynamically adjust atransconductance of one or more transistors in the crystal oscillatorcircuit.

In some aspects of the disclosure, the RDY generator 130 or the RDYgeneration circuit 600 includes a monitoring device configured tomonitor a duty cycle of a clock output signal of a crystal oscillatorcircuit during oscillation buildup upon power-up of the crystaloscillator circuit. The RDY generator 130 or the RDY generation circuit600 also includes a detecting device configured to detect whether theduty cycle of the clock output signal of the crystal oscillator circuitmeets a duty cycle threshold value. The RDY generator 130 or the RDYgeneration circuit 600 may further include an assertion deviceconfigured to assert a control signal based on detecting the duty cyclemeets the duty cycle threshold value. The asserted control signalconfigured to dynamically adjust a transconductance of one or moretransistors in the crystal oscillator circuit.

CONCLUSION AND ALTERNATE ASPECTS OF THE DISCLOSURE

Although specific circuitry has been set forth, it will be appreciatedby those skilled in the art that not all of the disclosed circuitry isrequired to practice the disclosed embodiments. Moreover, certain wellknown circuits have not been described, to maintain focus on thedisclosure.

The methodologies described herein may be implemented by various meansdepending upon the application. For example, these methodologies may beimplemented in hardware, firmware, software, or any combination thereof.For a hardware implementation, the processing units may be implementedwithin one or more application specific integrated circuits (ASICs),digital signal processors (DSPs), programmable logic devices (PLDs),field programmable gate arrays (FPGAs), processors, controllers,micro-controllers, microprocessors, electronic devices, other electronicunits designed to perform the functions described herein, or acombination thereof.

For a firmware and/or software implementation, the methodologies may beimplemented with modules (e.g., procedures, functions, and so on) thatperform the functions described herein. Any machine or computer readablemedium tangibly embodying instructions may be used in implementing themethodologies described herein. For example, software code may be storedin a memory and executed by a processor. When executed by the processor,the executing software code generates the operational environment thatimplements the various methodologies and functionalities of thedifferent aspects of the teachings presented herein. Memory may beimplemented within the processor or external to the processor. As usedherein, the term “memory” refers to any type of long term, short term,volatile, nonvolatile, or other memory and is not to be limited to anyparticular type of memory or number of memories, or type of media uponwhich memory is stored.

Software shall be construed broadly to mean instructions, instructionsets, code, code segments, program code, programs, subprograms, softwaremodules, applications, software applications, software packages,routines, subroutines, objects, executables, threads of execution,procedures, functions, etc., whether referred to as software, firmware,middleware, microcode, hardware description language, or otherwise. Thesoftware may reside on a computer-readable medium.

The machine or computer readable medium that stores the software codedefining the methodologies and functions described herein includesphysical computer storage media. A storage medium may be any availablemedium that can be accessed by a computer. By way of example, and notlimitation, such computer-readable media can comprise RAM, ROM, EEPROM,CD-ROM or other optical disk storage, magnetic disk storage or othermagnetic storage devices, or any other medium that can be used to storedesired program code in the form of instructions or data structures andthat can be accessed by a computer. As used herein, disk and/or discincludes compact disc (CD), laser disc, optical disc, digital versatiledisc (DVD), floppy disk and blu-ray disc where disks usually reproducedata magnetically, while discs reproduce data optically with lasers.Combinations of the above should also be included within the scope ofcomputer readable media.

In addition to storage on computer readable medium, instructions and/ordata may be provided as signals on transmission media included in acommunication apparatus. For example, a communication apparatus mayinclude a transceiver having signals indicative of instructions anddata. The instructions and data are configured to cause one or moreprocessors to implement the functions outlined in the claims.

The computer-readable medium may be embodied in a computer-programproduct. By way of example, a computer-program product may include acomputer-readable medium in packaging materials. Those skilled in theart will recognize how best to implement the described functionalitypresented throughout this disclosure depending on the particularapplication and the overall design constraints imposed on the overallsystem.

It is to be understood that the specific order or hierarchy of steps inthe methods disclosed is an illustration of exemplary processes. Basedupon design preferences, it is understood that the specific order orhierarchy of steps in the methods may be rearranged. The accompanyingmethod claims present elements of the various steps in a sample order,and are not meant to be limited to the specific order or hierarchypresented unless specifically recited therein.

Although the present teachings and their advantages have been describedin detail, it should be understood that various changes, substitutionsand alterations can be made herein without departing from the technologyof the teachings as defined by the appended claims. Moreover, the scopeof the present application is not intended to be limited to theparticular aspects of the process, machine, manufacture, composition ofmatter, means, methods and steps described in the specification. As oneof ordinary skill in the art will readily appreciate from thedisclosure, processes, machines, manufacture, compositions of matter,means, methods, or steps, presently existing or later to be developedthat perform substantially the same function or achieve substantiallythe same result as the corresponding aspects described herein may beutilized according to the present teachings. Accordingly, the appendedclaims are intended to include within their scope such processes,machines, manufacture, compositions of matter, means, methods, or steps.

The description is provided to enable any person skilled in the art topractice the various aspects described herein. Various modifications tothese aspects will be readily apparent to those skilled in the art, andthe generic principles defined herein may be applied to other aspects.Thus, the claims are not intended to be limited to the aspects shownherein, but is to be accorded the full scope consistent with thelanguage of the claims, in which reference to an element in the singularis not intended to mean “one and only one” unless specifically sostated, but rather “one or more.” Unless specifically stated otherwise,the term “some” refers to one or more. A phrase referring to “at leastone of” a list of items refers to any combination of those items,including single members. As an example, “at least one of: a, b, or c”is intended to cover: a; b; c; a and b; a and c; b and c; and a, b andc. All structural and functional equivalents to the elements of thevarious aspects described throughout this disclosure that are known orlater come to be known to those of ordinary skill in the art areexpressly incorporated herein by reference and are intended to beencompassed by the claims. Moreover, nothing disclosed herein isintended to be dedicated to the public regardless of whether suchdisclosure is explicitly recited in the claims. No claim element is tobe construed under the provisions of 35 U.S.C. §112, sixth paragraph,unless the element is expressly recited using the phrase “means for” or,in the case of a method claim, the element is recited using the phrase“step for.”

The foregoing description of one or more embodiments or aspects of thepresent disclosure has been presented for the purposes of illustrationand description. It is not intended to be exhaustive or to limit thedisclosure or the invention to the precise form disclosed. Manymodifications and variations are possible in light of the aboveteaching. Although the present disclosure and invention has beendescribed in connection with certain embodiments, it is to be understoodthat modifications and variations may be utilized without departing fromthe principles and scope of the disclosure or invention, as thoseskilled in the art will readily understand. Accordingly, suchmodifications would be practiced within the scope of the disclosure andinvention, and within the scope of the following claims or within thefull range of equivalents of the claims.

Further, the attached claims are presented merely as one aspect of thepresent invention. No disclaimer is intended, expressed, or implied forany claim scope of the present invention through the inclusion of thisor any other claim language that is presented herein or may be presentedin the future. Any disclaimers, expressed or implied, made duringprosecution of the present application regarding the claims presented,changes made to the claims for clarification, or other changes madeduring prosecution, are hereby expressly disclaimed for at least thereason of recapturing any potential disclaimed claim scope affected bypresentation of specific claim language during prosecution of this andany related applications. Applicant reserves the right to file broaderclaims, narrower claims, or claims of different scope or subject matter,in one or more continuation or divisional applications in accordancewithin the full breadth of the present disclosure, and the full range ofdoctrine of equivalents of the present disclosure, as recited in thisspecification.

1. An apparatus comprising: a monitoring device configured to monitor aduty cycle of a clock output signal of a crystal oscillator circuitduring oscillation buildup upon power-up of the crystal oscillatorcircuit, the duty cycle being conditioned to remain equal to or lessthan a predetermined value at the power-up; a detecting deviceconfigured to detect whether the duty cycle of the clock output signalof the crystal oscillator circuit meets a duty cycle threshold value;and an assertion device configured to assert a control signal based ondetecting the duty cycle meets the duty cycle threshold value, theasserted control signal configured to dynamically adjust atransconductance of the crystal oscillator circuit.
 2. The apparatus ofclaim 1, in which the control device signal is configured to adjust thetransconductance of the crystal oscillator circuit based on detecting ifthe duty cycle meets the duty cycle threshold value.
 3. The apparatus ofclaim 1, further comprising a delay device configured to delay theasserted control signal, the delayed signal configured to facilitategeneration of a glitch-less clock output signal based on detecting theduty cycle meets the duty cycle threshold value.
 4. The apparatus ofclaim 3, in which the asserted control signal is delayed to correspondto a time when a stable operation of the crystal oscillator circuit isinitiated.
 5. The apparatus of claim 3, in which the asserted controlsignal is delayed from a time that the crystal oscillator circuit ispowered up.
 6. The apparatus of claim 1, in which the assertion deviceis further configured to generate programmable thresholds fordynamically adjusting the transconductance of the crystal oscillatorcircuit.
 7. The apparatus of claim 1, in which the duty cycle isinitially set to zero.
 8. A method comprising: monitoring a duty cycleof a clock output signal of a crystal oscillator circuit duringoscillation buildup upon power-up of the crystal oscillator circuit, theduty cycle being conditioned to remain equal to or less than apredetermined value at the power-up; detecting whether the duty cycle ofthe clock output signal of the crystal oscillator circuit meets a dutycycle threshold value; and asserting a control signal based on detectingthe duty cycle meets the duty cycle threshold value, the assertedcontrol signal configured to dynamically adjust a transconductance ofone or more transistors in the crystal oscillator circuit.
 9. The methodof claim 8, further comprising adjusting the transconductance of thecrystal oscillator circuit based on the control device signal and basedon detecting if the duty cycle meets the duty cycle threshold value. 10.The method of claim 8, further comprising delaying the asserted controlsignal, the delayed signal configured to facilitate generation of aglitch-less clock output signal based on detecting if the duty cyclemeets the duty cycle threshold value.
 11. The method of claim 10, inwhich the asserted control signal is delayed to correspond to a timewhen a stable operation of the crystal oscillator circuit is initiated.12. The method of claim 10, in which the asserted control signal isdelayed from a time that the crystal oscillator circuit is powered up.13. The method of claim 8, further comprising generating programmablethresholds for dynamically adjusting the transconductance of the crystaloscillator circuit.
 14. The method of claim 8, in which the duty cycleis initially set to zero.
 15. An apparatus comprising: means formonitoring a duty cycle of a clock output signal of a crystal oscillatorcircuit during oscillation buildup upon power-up of the crystaloscillator circuit, the duty cycle being conditioned to remain equal toor less than a predetermined value at the power-up; means for detectingwhether the duty cycle of the clock output signal of the crystaloscillator circuit meets a duty cycle threshold value; and means forasserting a control signal based on detecting the duty cycle meets theduty cycle threshold value, the asserted control signal configured todynamically adjust a transconductance of the crystal oscillator circuit.16. The apparatus of claim 15, further comprising means for delaying theasserted control signal, the delayed signal configured to facilitategeneration of a glitch-less clock output signal based on detecting theduty cycle meets the duty cycle threshold value.
 17. The apparatus ofclaim 1, in which the predetermined value is zero or one.
 18. The methodof claim 8, in which the predetermined value is zero or one.
 19. Theapparatus of claim 15, in which the predetermined value is zero or one.